Methods of forming a capacitor contact opening, etching capacitor contact openings, and methods of forming memory

ABSTRACT

Methods of forming conductive capacitor plugs, methods of forming capacitor contact openings, and methods of forming memory arrays are described. In one embodiment, a conductive capacitor plug is formed to extend from proximate a substrate node location to a location elevationally above all conductive material of an adjacent bit line. In another embodiment, a capacitor contact opening is etched through a first insulative material received over a bit line and a word line substantially selective relative to a second insulative material covering portions of the bit line and the word line. The opening is etched to a substrate location proximate the word line in a self-aligning manner relative to both the bit line and the word line. In another embodiment, capacitor contact openings are formed to elevationally below the bit lines after the bit lines are formed. In a preferred embodiment, capacitor-over-bit line memory arrays are formed.

TECHNICAL FIELD

This invention relates to methods of forming conductive capacitor plugs,to methods of forming capacitor contact openings, and to methods offorming memory arrays.

BACKGROUND OF THE INVENTION

Semiconductor processing involves a number of processing steps in whichindividual layers are masked and etched to form semiconductorcomponents. Mask alignment is important as even small misalignments cancause device failure. For certain photomasking steps, proper alignmentis extremely critical to achieve proper fabrication. In others, designrules are more relaxed allowing for a larger margin for alignmenterrors. One way in which design rules can be relaxed is to provideprocessing sequences which enable so-called self aligned etches, such asto encapsulated word lines in the fabrication of memory circuitry.Further, there is a goal to reduce or minimize the number of steps in aparticular processing flow. Minimizing the processing steps reduces therisk of a processing error affecting the finished device, and reducescost.

This invention arose out of needs associated with improving the mannerin which semiconductor memory arrays, and in particularcapacitor-over-bit line memory arrays, are fabricated.

SUMMARY OF THE INVENTION

Methods of forming conductive capacitor plugs, methods of formingcapacitor contact openings, and methods of forming memory arrays aredescribed. In one embodiment, a conductive capacitor plug is formed toextend from proximate a substrate node location to a locationelevationally above all conductive material of an adjacent bit line. Inanother embodiment, a capacitor contact opening is etched through afirst insulative material received over a bit line and a word linesubstantially selective relative to a second insulative materialcovering portions of the bit line and the word line. The opening isetched to a substrate location proximate the word line in aself-aligning manner relative to both the bit line and the word line. Inanother embodiment, capacitor contact openings are formed toelevationally below the bit lines after the bit lines are formed. In apreferred embodiment, capacitor-over-bit line memory arrays are formed.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a top plan view of the semiconductor wafer fragment in processin accordance with one embodiment of the invention.

FIG. 2 is a view of the FIG. 1 wafer fragment at a different processingstep.

FIG. 3 is a view which is taken along line 3-3 in FIG. 2.

FIG. 4 is a view of the FIG. 3 wafer fragment at a different processingstep.

FIG. 5 is a view of the FIG. 4 wafer fragment at a different processingstep.

FIG. 6 is a view of the Fig. 5 wafer fragment at a different processingstep.

FIG. 7 is a view of the FIG. 6 wafer fragment at a different processingstep.

FIG. 8 is a view of the FIG. 2 wafer fragment at a different isprocessing step.

FIG. 9 is a view which is taken along line 9-9 in FIG. 8.

FIG. 10 is a view of the FIG. 9 wafer fragment at a different processingstep.

FIG. 11 is a view of the FIG. 10 wafer fragment at a differentprocessing step.

FIG. 12 is a view of the FIG. 11 wafer fragment at a differentprocessing step.

FIG. 13 is a view of the FIG. 12 wafer fragment at a differentprocessing step.

FIG. 14 is a view which is taken along line 14-14 in FIG. 8 and somewhatreduced in dimension.

FIG. 15 is a view of the FIG. 14 wafer fragment at a differentprocessing step.

FIG. 16 is a view of the FIG. 15 wafer fragment at a differentprocessing step.

FIG. 17 is a view of a semiconductor wafer fragment in process, inaccordance with another embodiment of the invention. The FIG. 17 viewcoincides to processing which can occur after the view depicted in FIG.12.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

Referring to FIG. 1, a semiconductor wafer fragment 20 in process inaccordance with one embodiment of the invention includes asemiconductive substrate 22. In the context of this document, the term“semiconductive substrate” is defined to mean any constructioncomprising semiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove. Substrate 22 includes a plurality of active areas 24 and aplurality of isolation regions 26. Isolation regions 26 can be formedthrough various techniques including shallow trench isolation.

Referring to FIGS. 2 and 3, a plurality of conductive lines 28 areformed over substrate 22 and constitute word lines of a memory arraywhich is to be formed. Each of word lines 28 includes a gate oxide layer30, a conductive polysilicon layer 32, and an overlying silicide layer34. Insulative coverings are formed over individual word lines 28 andinclude sidewall spacers 36 and an insulative cap 38. The insulativecoverings preferably encapsulate the word lines. Exemplary insulativematerials include oxide formed through decomposition of TEOS, ornitride/oxynitride materials. Diffusion regions 40 are provided andformed intermediate word lines 28 and define substrate node locationswith which electrical communication is desired. The illustrateddiffusion regions include lightly doped drain (LDD) regions (notspecifically designated).

Referring to FIG. 4, a first layer 42 is formed over substrate 22 andbetween conductive lines 28 and comprises a first insulative materialwhich is different from the insulative material covering orencapsulating word lines 28. An exemplary material isborophosphosilicate glass (BPSG) which can be subsequently reflowed andplanarized as by conventional techniques to provide a generally planaruppermost surface 44. A first masking layer 46 is formed over thesubstrate and defines a plurality of bit line plug mask openings 48. Anexemplary material is photoresist.

Referring to FIG. 5, material of first layer 42 is etched through bitline plug mask openings 48 and individual substrate diffusion regions 40between selected word lines 28 are preferably exposed. Such etchingforms bit plug openings 50 intermediate the selected word lines.

Referring to FIG. 6, conductive material 52 is formed over and inelectrical communication with the individual substrate diffusion regions40 beneath bit plug openings 50 (FIG. 5). An exemplary material isconductively doped polysilicon which can be deposited, and portionssubsequently removed, to isolate the conductive material within the bitplug openings and form individual plugs 54. Plugs 54 can be formed bychemical mechanical polishing conductive material 52 or through variousetch back techniques.

Referring to FIGS. 7 and 8, individual bit lines 56 are formed and inelectrical communication with respective individual conductive bit lineplugs 54. Bit lines 56 are formed over insulative material 42 and theillustrated word lines 28. Bit lines 56 include a polysilicon layer 58and a silicide or other conductive layer 60 (i.e., tungsten). Aninsulative covering 62 is formed over conductive material of the bitlines and can comprise a suitable oxide, such as one formed throughdecomposition of TEOS, or nitride/oxynitride materials. The various bitline layers are preferably blanket deposited over the substrate andsubsequently photomasked and etched to provide the illustrated bit lines(FIG. 8). Alternately, the bit line plug and the bit line can comprise acommon material deposited during the same processing step. For example,layers 52 and 58 could comprise the same material which is depositedthick enough to form both the conductive plug and some or all of bitlines 56.

Referring to FIG. 9, a view is shown which is taken along line 9-9 inFIG. 8 and cuts across three individual bit line plugs 54 and theirassociated bit lines 56.

Referring to FIG. 10, a layer of insulative material is formed oversubstrate 22 and etched to provide insulative coverings in the form ofsidewall spacers 64. Sidewall spacers 64 together with insulativecoverings 62 serve to encapsulate the individual bit lines. It will beappreciated, however, that the insulative material which ultimatelybecomes sidewall spacers 64 need not be etched to form the sidewallspacers at this time. Exemplary materials for insulative material 64include oxide formed through decomposition of TEOS, ornitride/oxynitride materials. In a preferred embodiment, the insulativematerial which is utilized to encapsulate the word lines (FIG. 3) is thesame material which is utilized to encapsulate the bit lines.

Referring to FIG. 11, a second layer 66 is formed over the word linesand bit lines 56, and preferably comprises the first insulative materialwhich was formed over word lines 28, e.g. BPSG. Such layer is preferablyreflowed and planarized. Layers 42, 66 constitute a plurality ofseparately-formed layers of first insulative material which, in thepreferred embodiment, comprise two layers.

Referring to FIG. 12, a second patterned masking layer 68 is formed oversecond layer 66 and defines a plurality of opening patterns 70 overvarious substrate diffusion regions 40. Openings 70 are formed onopposite sides of individual word lines between which individual bitline plugs are formed. A preferred alternative to forming individualopenings 70 over the illustrated diffusion regions is to form aso-called stripe opening which can be opened up over a plurality of thediffusion regions, where of the stripe opening intersects with the bitline spacers. An exemplary stripe opening is illustrated in FIG. 8inside dashed line 72 (FIG. 8).

Whether individual openings 70 are formed in second masking layer 68 orstripe opening 72 is formed, capacitor contact openings 74 are etchedthrough first and second layers of insulative material 42, 66respectively. In the illustrated example, capacitor contact openings 74are etched to elevationally below bit lines 56, down to proximateindividual word lines of the memory array. In a preferred embodiment,the etching exposes individual diffusion regions 40. In this example,and because individual openings 70 are formed in second masking layer68, some portions of second layer 66 remain over the individual bitlines. Where, however, the above-mentioned stripe opening 72 (FIG. 8) isformed, all of first insulative material 66 over the individual bitlines would ideally be removed.

In a preferred embodiment, the material which is used to encapsulateboth the bit lines and the word lines is selected to comprise the samematerial, or, a material selective to which layers 42, 66 can be etched.Accordingly, etch chemistries can be selected to etch material of bothlayers 42, 66 substantially selectively relative to the materialencapsulating both the word lines and the bit lines. Hence, capacitorcontact openings 74 can be formed in a self-aligning manner to begenerally self-aligned to both the bit lines and the word lines. Aspectsof the invention also include non-capacitor-over-bit line memory arrayfabrication processes, and selective etching of contact openings whichmight not be capacitor contact openings.

Referring to FIGS. 13 and 14, conductive material 76 is formed withinindividual contact openings 74 and in electrical communication withindividual respective diffusion regions 40. An exemplary material isconductively doped polysilicon which can be subsequently etched back orchemical mechanical polished to form individual capacitor plugs 78. Inthe illustrated example, conductive material 76 extends from proximatediffusion regions 40 to respective elevations which are at leastlaterally proximate (including higher) individual conductive portions ofthe bit lines. In a preferred embodiment, conductive material 76 extendsto locations which are elevationally higher than any conductive portionof any bit line. Individual conductive capacitor plugs 78 includeindividual surfaces 80 proximate which each plug terminates. Surfaces 80are disposed at elevations above conductive portions of the bit lines.

Referring to FIGS. 15 and 16, an insulative layer 82, e.g. BPSG, isformed over the substrate and subsequently patterned and etched to formindividual capacitor containers 84 (FIG. 16). Storage capacitors arethen formed by depositing a storage node layer 86, a cell dielectriclayer 88, and a cell plate layer 90. Accordingly, such constitutes aportion of a capacitor-over-bit line memory array.

In but one aspect, the above methods can facilitate formation of memorycircuitry over other techniques wherein the capacitor plugs are formedprior to formation of the bit lines. Such other techniques can presentalignment problems insofar capacitor container-to-bit line, andcapacitor container-to-word line, alignments are concerned. Aspects ofthe present invention can permit the capacitor plugs to be formed to begenerally self-aligned to both the word lines and the bit lines, whilepreserving the mask count necessary to form the subject memory arrays.Other aspects of the present invention can ease alignment constraintsimposed on capacitor container alignment by removing requirements thatthe containers be etched to be self-aligned to other structuresincluding the bit lines.

Referring to FIG. 17, and in accordance with an alternate embodiment ofthe present invention, storage capacitors can be formed directly withincontact openings 74 (see FIG. 12) such that capacitor plugs 78 (FIG. 13)are not necessary. Like numbers from the above-described embodiment havebeen utilized where appropriate, with differences being indicated withthe suffix “a”. A layer 66 a is formed over the substrate andsubsequently patterned and etched, along with layer 42 as describedabove, to form capacitor containers 84 a. Subsequently, storagecapacitors are formed by depositing a storage node layer 86 a, a celldielectric layer 88 a, and a cell plate layer 90 a. Accordingly, suchconstitutes forming conductive material at least partially withinindividual contact openings 74. The above storage capacitorconstructions are for illustrative purposes only. Accordingly, otherconstructions are possible. For example, and by way of example only,plugging material 76 of FIGS. 13 and 14 might be etched partially inwardto provide more room, and thereby more capacitance, for the capacitorbeing formed. Further and by way of example only, some or all of theinsulative material laterally outside of the capacitor container mightbe etched away in advance of forming the capacitor dielectric layer toprovide more surface area and thereby more capacitance. Memory cells ofthe invention can be fabricated to occupy 6F², 8F² or other areas, with6F² being preferred.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1-48. (canceled)
 49. A method of forming a capacitor contact opening in a memory structure, the method comprising etching an opening through a first insulative material received over a bit line and a word line substantially selective relative to second insulative material covering the bit line and the word line to a substrate location proximate the word line in a self-aligning manner relative to both the bit line and the word line.
 50. The method of claim 49, wherein the first insulative material comprises separately-formed layers of insulative material.
 51. The method of claim 49, wherein the first insulative material comprises two separately-formed layers of insulative material.
 52. The method of claim 49, wherein the second insulative material separately encapsulates the bit line and the word line.
 53. The method of claim 49, wherein the substrate location comprises a diffusion region, and the etching comprises outwardly exposing the diffusion region.
 54. The method of claim 49, wherein the etching comprises removing all of the first insulative material from over the bit line.
 55. The method of claim 49, wherein the etching comprises forming a patterned masking layer over the first insulative material defining an opening pattern, and etching the opening through the opening pattern.
 56. The method of claim 49, further comprising forming conductive material within the opening, the conductive material extending to an elevation laterally proximate conductive portions of the bit line.
 57. The method of claim 49, further comprising forming conductive material within the opening, the conductive material extending to a location elevationally higher than any conductive portion of the bit line.
 58. Etching capacitor contact openings in a memory structure to elevationally below the bit lines after forming the bit lines, wherein etching comprises selectively etching through first insulative material relative to second insulative material covering portions of the bit lines.
 59. The method of claim 58, wherein the etching comprises etching openings down to proximate individual substrate diffusion regions.
 60. The method of claim 58, wherein the etching comprises etching openings down to proximate individual word lines.
 61. The method of claim 60, wherein the etching comprises exposing individual substrate diffusion regions intermediate the word lines.
 62. The method of claim 58, further comprising forming conductive material within the contact openings, the conductive material extending to at least laterally proximate conductive portions of the bit lines.
 63. The method of claim 58, further comprising forming conductive material within the contact openings, the conductive material extending elevationally higher than any conductive portions of the bit lines.
 64. The method of claim 58, wherein the etching through the first insulative material relative to the second insulative material comprises leaving the second insulative material substantially unetched during and after the etching.
 65. The method of claim 58, wherein the first insulative material and the second insulative material individually comprise a layer having a surface substantially parallel to a surface of a substrate of a memory array.
 66. Etching capacitor contact openings in a memory structure to elevationally below the bit lines after forming the bit lines, wherein the etching comprises selectively etching through first insulative material relative to second insulative material covering portions of the bit lines and word lines.
 67. The method of claim 66, wherein the first insulative material comprises a plurality of separately formed layers of first insulative material.
 68. The method of claim 66, wherein the etching through the first insulative material relative to the second insulative material comprises leaving the second insulative material substantially unetched during and after the etching.
 69. A method of forming memory comprising: forming a plurality of word lines over a substrate, the word lines having insulating material thereover; forming a plurality of bit lines over the word lines, the bit lines having insulating material thereover; forming insulative material over the word lines and the bit lines, the insulative material being etchably different from the insulating material over the word lines and the insulating material over the bit lines; and selectively etching capacitor contact openings through the insulative material relative to the insulating material over the bit lines and the insulating material over the word lines; the openings being self-aligned to both bit lines and word lines and extending to proximate the substrate.
 70. The method of claim 69, wherein the forming of the insulative material comprises forming a plurality of layers of insulative over at least one of the word lines and bit lines.
 71. The method of claim 69, wherein forming of the insulative material comprises forming one layer of insulative material over the word lines, and after the forming of the bit lines, forming another layer of insulative material over the bit lines.
 72. The method of claim 71, further comprising forming a patterned masking layer over the insulative material defining a mask opening, the mask opening being received over a plurality of substrate locations over which the capacitor contact openings are to be etched, and the etching of the capacitor contact openings comprises etching said contact openings through said mask opening.
 73. The method of claim 69, further comprising forming conductive material within the contact openings, the conductive material being formed to extend from proximate individual substrate diffusion regions to at least locations which are elevationally coincident with conductive material of the individual bit lines.
 74. The method of claim 69, further comprising forming conductive material within the contact openings, the conductive material being formed to extend from proximate individual substrate diffusion regions to locations elevationally higher than any conductive material of any of the bit lines.
 75. A method of forming memory comprising: forming a plurality of word lines over a substrate; forming a plurality of bit lines over the word lines; forming insulative material over the word lines and the bit lines; and after forming the bit lines, etching an opening through the insulative material and outwardly exposing a diffusion region received within the substrate proximate a word line, wherein the forming of the insulative material comprises forming two separate layers of insulative material over the substrate, and the etching of the opening comprises etching the two layers selectively relative to insulative coverings formed over portions of both the bit lines and the word lines.
 76. The method of claim 75, further comprising forming conductive material within the opening, the conductive material extending from proximate the diffusion region to a location elevationally higher than any conductive material of the bit lines.
 77. The method of claim 75, wherein the insulative coverings contact respective ones of the portions of the bit lines and the word lines.
 78. A method of forming memory comprising in sequence: forming a plurality of conductive lines over a substrate; forming a conductive bit line plug intermediate a pair of the conductive lines; forming a bit line in electrical communication with the conductive bit line plug; forming a conductive capacitor plug proximate one of the pair of conductive lines, which capacitor plug extends away from the substrate and terminates above conductive portions of the bit line; and forming a capacitor over and in electrical communication with the capacitor plug, and further comprising, prior to the forming of the conductive bit line plug, forming first insulative material over the conductive lines, and wherein the forming of the conductive capacitor plug comprises substantially selectively etching an opening into the first insulative material relative to second insulative material over the conductive lines.
 79. The method of claim 78, wherein the memory comprises a capacitor-over-bit line memory array.
 80. The method of claim 78, wherein the bit line plug and bit line comprise at least one common material.
 81. The method of claim 78, wherein the bit line plug and bit line comprise at least one common material, said common material being deposited in a common processing step.
 82. The method of claim 78, wherein the forming of the capacitor plug comprises forming said surface elevationally higher than any conductive portion of the bit line.
 83. A method of forming memory comprising in sequence: forming a plurality of conductive lines over a substrate; forming a conductive bit line plug intermediate a pair of the conductive lines; forming a bit line in electrical communication with the conductive bit line plug; forming a conductive capacitor plug proximate one of the pair of conductive lines, which capacitor plug extends away from the substrate and terminates above conductive portions of the bit line; and forming a capacitor over and in electrical communication with the capacitor plug, and further comprising, prior to the forming of the conductive capacitor plug, forming first insulative material over the bit line, and wherein the forming of the conductive capacitor plug comprises substantially selectively etching an opening into the first insulative material relative to second insulative material over the bit line.
 84. A method of forming memory comprising in sequence: forming a plurality of conductive lines over a substrate; forming a conductive bit line plug intermediate a pair of the conductive lines; forming a bit line in electrical communication with the conductive bit line plug; forming a conductive capacitor plug proximate one of the pair of conductive lines, which capacitor plug extends away from the substrate and terminates above conductive portions of the bit line; forming a capacitor over and in electrical communication with the capacitor plug, and further comprising: prior to the forming of the conductive bit line plug, forming a first layer of first insulative material over the conductive lines; prior to the forming of the conductive capacitor plug, forming a second layer of first insulative material over the bit line; and wherein the forming of the conductive capacitor plug comprises substantially selectively etching an opening into the first insulative material relative to second insulative material over the conductive lines and bit line.
 85. The method of claim 84, wherein the etching comprises exposing a substrate diffusion region proximate the conductive lines.
 86. A method of forming memory comprising: forming a plurality of word lines over a substrate, the word lines having insulating material thereover; forming a plurality of bit lines over the word lines, the bit lines having insulating material thereover; forming insulative material over the word lines and the bit lines, the insulative material being etchably different from the insulating material over the word lines and the insulating material over the bit lines; and selectively etching contact openings through the insulative material relative to the insulating material over the bit lines and the insulating material over the word lines, the openings being self-aligned to both bit lines and word lines and extending to proximate the substrate. 